npn silicon planar medium power transistors issue 1 ? march 94 features * 40 volt v ceo * gain of 50 at i c = 1 amp *p tot = 1 watt absolute maximum ratings. parameter symbol 2n 6714 2n6715 unit collector-base voltage v cbo 40 50 v collector-emitter voltage v ceo 30 40 v emitter-base voltage v ebo 5v peak pulse current i cm 2a continuous collector current i c 1a power dissipation at t amb = 25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol 2n 6714 2n6715 unit conditions. min. max. min. max. collector-base breakdown voltage v (br)cbo 40 50 v i c =1ma, i e =0 collector-emitter breakdown voltage v (br)ceo 30 40 v i c =10ma, i b =0* emitter-base breakdown voltage v (br)ebo 55vi e =1ma, i c =0 collector cut-off current i cbo 0.1 0.1 m a m a v cb =40v, i e =0 v cb =50v, i e =0 emitter cut-off current i ebo 0.1 0.1 m a v eb =5v, i c =0 collector-emitter saturation voltage v ce(sat) 0.5 0.5 v i c =1a, i b =100ma* base-emitter turn-on voltage v be(on) 1.2 1.2 v ic=1a, v ce =1v* static forward current transfer ratio h fe 55 60 50 250 55 60 50 250 i c =10ma, v ce =1v* i c =100ma, v ce =1v* i c =1a, v ce =1v* transition frequency f t 50 500 50 500 mhz i c =50ma, v ce =10v collector base capacitance c cb 30 30 pf v ce =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% e-line to92 compatible 2n6714 2n6715 3-5 c b e not recommended for new design please use ztx449 / ztx651
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